METHOD OF MAKING COMPOSITE SUBSTRATE FROM SIC Russian patent published in 2020 - IPC H01L21/02 H01L21/20 

FIELD: chemical or physical processes; manufacturing technology.

SUBSTANCE: disclosed is a method of producing composite substrate 10 of SiC with monocrystalline 12 SiC layer on a polycrystalline Si substrate, in which after providing a monocrystalline SiC layer 12 on the front surface of support substrate 21 containing Si and having a silicon oxide film 21a on the front and rear sides thereof, to obtain a monocrystalline SiC layer carrier 14, part or entire thickness of silicon oxide film 21a on one region or entire back surface of support substrate 21 in monocrystalline SiC layer carrier 14 is removed to crush carrier 14' of monocrystalline SiC layer, then polycrystalline SiC is deposited on monocrystalline SiC layer 12 by chemical deposition from vapor phase to form polycrystalline substrate 11 of SiC, and thereafter, the support substrate is removed physically and/or chemically.

EFFECT: by means of the present invention, it is possible to obtain a composite substrate of SiC having a monocrystalline SiC layer with good crystallinity and low warpage using a simple manufacturing method.

6 cl, 1 tbl, 4 dwg