FIELD: ferroelectric or electret memorizing contour (C) .
SUBSTANCE: ferroelectric or electret memorizing contour has memory cell with ferroelectric or electret memorizing material, and two electrodes, while one of electrodes has at least one functional material, capable of physical and/or chemical incorporation of atomic or molecular particles in its volume, aforementioned particles contained in electrode or in memorizing material of memory cell.
EFFECT: increased resistance to wear: minimization of wear processes in memorizing devices, based on organic and, in particular, polymer electrets and ferroelectrics.
2 cl, 11 dwg
