FIELD: information technology.
SUBSTANCE: invention belongs to the addressing method of the ferroelectric or electret memory cell by reading or writing into it. During the initial writing operation, the memory cell is set in one of the two stable polarisation state, which appropriate logic values are attributed to. Then, one or more voltage impulses are fed to the cell in order to ensure relaxing of the imprinting state. Then, non-destructive reading of the memory cell can be done by feeding one or more appropriate voltage impulses to the cell. The writing operation can be done by feeding analogous voltage impulses in order to write the same or inversed logic value to the cell. One or more analogous voltage impulses can also be fed to the cell being in the imprinting state, without providing its relaxation, but in such a way that would ensure non-destructive reading if the originally written value.
EFFECT: enhancing data storage quality in the short run.
7 cl, 7 dwg
