METHOD OF POINT-LIKE SILICATE THREAD CRYSTALS GROWING Russian patent published in 2018 - IPC C30B11/12 C30B29/06 C30B29/62 H01L21/02 B82B3/00 B82Y40/00 H01J9/02 H01J1/304 G01Q70/12 G01Q70/16 G01Q60/22 

FIELD: electricity.

SUBSTANCE: invention relates to the technology of obtaining semiconductor materials for the creation of field emission electronic devices (with "cold electron emission") for the manufacture of probes and cantilevers of scanning probe microscopes and operational memory devices with a high data recording density, surface-developed electrodes of electrochemical cells of current sources, as well as for use in the production technologies of silicon solar cells of a new generation for increasing the efficiency of the antireflective surface of photoconverters. Methods of growing point-like silicon thread crystals involves preparing a silicon wafer by depositing a catalyst film on its surface, followed by placement in a growth furnace, heating and precipitation of the gas phase crystallizable substance according to the scheme steam → liquid drop → crystal, wherein the catalyst is selected from metals forming a phase diagram with a degenerate eutectic with silicon, molar ratio of the components of the gas phase is maintained in the interval 0.01≤n≤0.025. Further, the catalyst film is deposited on the substrate no more than 2 mcm, and precipitation of the crystallizable substance is conducted until the catalyst is completely consumed.

EFFECT: invention makes it possible to obtain point-like nanocrystals of silicon with an ultrathin vertex (with a radius of curvature of the surface near the apex of less than 50 nm), which ensures their high functional capacity, and a relatively thick base - good mechanical strength with large cyclic loads and vibration.

1 cl, 1 dwg, 5 ex