SEMICONDUCTOR PRESSURE CONVERTER Russian patent published in 2007 - IPC G01L9/04 

FIELD: measuring equipment engineering, in particular, engineering of low pressure converters, possible use in development and manufacture of small dimension semiconductor pressure converters, which are capable of service under increased temperatures.

SUBSTANCE: semiconductor pressure converter contains a membrane with thickened peripheral base, with profile which represents a combination of thinned sections and rigid centers with concentrators of mechanical stress located where resistive-strain sensors are positioned. The membrane is made of silicon, alloyed with boron and has thickness which equals height of resistive-strain sensors with the surface, covered in a layer of silicon dioxide. Resistive-strain sensors are formed on silicon dioxide layer held on membrane and made of silicon, which is alloyed with boron up to the same level of concentration as the membrane, combined by means of commutation buses in bridge measuring circuit and have metallized contact area connected to them. The silicon dioxide layer is positioned only below resistive-strain sensors and commutation buses, and the surface of membrane on the side of resistive-strain sensors is covered in a layer of non-alloyed polycrystalline silicon.

EFFECT: increased reliability of the converter, increased strength of membrane, increased stability of parameters and increased sensitivity.

1 dwg