THIN-FILM RESISTOR Russian patent published in 2005 - IPC

FIELD: development of thin-film resistors on insulating substrates.

SUBSTANCE: proposed thin-film resistor has two opposing comb-shaped electrodes built around multilayer conducting structure and n rectangular resistor units at n ≥ 2 disposed in parallel with electrode width, the latter amounting to kl, where k > 0 and l is resistor unit length. Thin-film resistor also has n - 1 rectangular ports unoccupied by film components and disposed at ends of resistor units perpendicular to them. Resistor units whose width b₁ equals that of electrodes minus minimal electrode-to-electrode gap b₀ have equal shape factor K_s1. Thin-film resistor also has two contact pads each connected to one of electrode bases, that it to external part of comb-shaped electrode throughout its entire length; resistance R_e of both electrodes is calculated from formula R_e = 2ρ_n[l/(nK_s) + b₀/l](kn), where ρ_n is surface resistivity of multilayer conducting structure; K_s = l/b is shape factor of thin-film resistor; b - nb₁ is width of thin-film resistor.

EFFECT: minimized resistance of thin-film resistor electrodes and of electrodes of each resistor unit.

1 cl