THIN-FILM RESISTOR AND METHOD OF ITS MANUFACTURE Russian patent published in 2004 - IPC

FIELD: microelectronics.

SUBSTANCE: thin-film resistor has rectangular resistive element and two electrodes of multilayer conducting structure, which have comb shape and include n resistive elements positioned in parallel to width of electrodes and n-1 rectangular windows unoccupied by film elements and arranged by termination of resistive elements perpendicular to them. Coefficient of form of each resistive element should be held within limits length of electrodes should be less than length of resistive elements. Method of manufacture of thin-film resistor consists in deposition of resistive layer and multilayer conducting structure on substrate and realization of double photolithography. Interdigital electrodes are formed by etching of multilayer structure after first photolithography, resistive elements are formed after second photolithography. In process of second photolithography photoresist is deposited on entire resistor except windows. Width of windows is equal to minimal width of gap between electrodes, which is allowed by technological process. Later resistive layer in windows is etched away.

EFFECT: expanded range of thin-film resistors manufactured on single plate.

2 cl, 3 dwg