HIGH-POWER RF AND MICROWAVE TRANSISTOR Russian patent published in 2010 - IPC H01L29/72 

FIELD: electricity.

SUBSTANCE: in RF and microwave transistors, conductor contacts (CC) connecting a coating and an emitter package terminal, and the CCs connecting the coating and emitter regions of transistor cells (TC) are arranged on the opposite sides of one capacitor coating of an internal input matching LC-link. And some of the last CCs are arranged on metallised strips (MS) limited to a coating edge and perpendicular notches. For this purpose, the lengths and widths of the MS are specified such that to actualise partially or completely the appropriate related stabilising resistance (SR) between the TC emitter regions and the condenser coating providing a uniform heating of the TC in operation conditions due to the MS resistances proportional to the MS relation. It allows reducing the area of the TC structures being under emitter voltage and thereby reducing stray transfer 'collector-emitter' capacitance.

EFFECT: higher power gain factor of a RF and microwave transistor.

1 dwg