FIELD: non-iron metallurgy, in particular gallium refining.
SUBSTANCE: crude gallium is converted to highly volatile gallium(I) oxide Ga2O by metal heating in presence of gallium(III) oxide Ga2O3 at 500-7000C in vacuum to provide a slop. Highly volatile gallium(I) oxide Ga2O is fed into disproportionation zone under the same conditions followed by disproportionation to form metal gallium and gallium(III) oxide Ga2O3 at 700-9000C Obtained slop is recycled to reuse by addition to starting crude gallium.
EFFECT: purified gallium with decreased content of Sn, Fe, Al, Si, Ni impurities; reduced waste; and low cost process.
4 tbl, 1 ex
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR MANUFACTURE OF p-i-n SEMICONDUCTOR STRUCTURE BASED ON GaAs-GaAlAs COMPOUNDS BY WAY OF LIQUID EPITAXY METHOD | 2012 |
|
RU2488911C1 |
| METHOD FOR PRODUCING EXTRA-PURE CHALCOGENIDE GLASSES CONTAINING GALLIUM | 2021 |
|
RU2770494C1 |
| METHOD OF GALLIUM-ARSENIC-BEARING WASTES PROCESSING | 1995 |
|
RU2078842C1 |
| CATALYTIC COMPOSITION AND PROCESS FOR DEHYDROGENATION OF BUTENES OR MIXTURES OF BUTANES AND BUTENES TO GIVE 1,3-BUTADIENE | 2012 |
|
RU2614977C2 |
| METHOD OF PREPARING ALUMINA AEROGEL | 1998 |
|
RU2150429C1 |
| METHOD OF RECYCLING WASTES OF SEMICONDUCTIVE GALLIUM COMPOUNDS | 2014 |
|
RU2554253C2 |
| METHOD OF PRODUCING ESPECIALLY PURE SULPHIDES OF P-ELEMENTS OF GROUP III | 2012 |
|
RU2513930C1 |
| METHOD FOR OBTAINING P-I-N STRUCTURE BASED ON GAAS-GAALAS COMPOUNDS BY LIQUID-PHASE EPITAXY | 2020 |
|
RU2749501C1 |
| METHOD TO CONCENTRATE SCATTERED ELEMENTS | 2014 |
|
RU2553109C2 |
| EXHAUST GAS TREATMENT CATALYST AND METHOD OF CATALYST OBTAINMENT | 2006 |
|
RU2370308C1 |
