METHOD FOR OBTAINING P-I-N STRUCTURE BASED ON GAAS-GAALAS COMPOUNDS BY LIQUID-PHASE EPITAXY Russian patent published in 2021 - IPC H01L21/208 

FIELD: power microelectronic engineering.

SUBSTANCE: invention relates to the field of power microelectronic engineering, and more specifically to methods for manufacturing semiconductor p-i-n structures from A³B⁵ compounds by epitaxy methods. The method includes composing an initial charge, loading gallium, charge components and GaAs substrates into a graphite growth device, and then into a reactor; heating the contents of the reactor in a dehydrated atmosphere, followed by annealing in the same atmosphere; contacting the substrate with the resulting melt solution; subsequent forced cooling for growing a GaAs epitaxial layer having a p-i-n structure; removal of the substrate covered with a GaAs layer having a p-i-n structure from under the melt. At least gallium oxide Ga₂O₃ and monocrystalline silicon Si are added to the charge.

EFFECT: invention makes it possible to obtain p-i-n structures of gallium arsenide by the LPE method with high reproducibility of the basic electrophysical parameters of the structures and with a high yield of suitable structures.

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