METHOD FOR MANUFACTURE OF p-i-n SEMICONDUCTOR STRUCTURE BASED ON GaAs-GaAlAs COMPOUNDS BY WAY OF LIQUID EPITAXY METHOD Russian patent published in 2013 - IPC H01L21/208 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of microelectronic power engineering, more specifically - to methods for manufacture of p-i-n semiconductor structures of A³B⁵ compounds by way of liquid epitaxy methods. The concept of the invention is as follows: method for manufacture of p-i-n semiconductor structure based on GaAs-GaAlAs compounds by way of liquid epitaxy method includes initial charge stock heating to obtain a saturated solution-melt of its components, interaction of the solution-melt with the components to obtain the preset composition of the solution-melt, contacting the substrate with the obtained solution-melt, further forced cooling for growing epitaxial layer GaAss having p-i-n structure, removal of the substrate coated with GaAss layer having p-i-n structure from under the melt; the component compositions of the solution-melts GaAs p-i-n structure growth are configured in a dehydrated atmosphere by way of preliminary introduction of two additional solid components (represented by silicon dioxide SiO₂ and gallium (III) oxide into the initial charge stock with further heating of such multicomponent charge stock to epitaxy commencement temperature with maintenance at such temperature during a pre-set period of time.

EFFECT: high reproducibility, simplicity and versatility of the technology, possibility to use the developed method for industrial-scale manufacture structures for power electronics possessing high engineering parameters.

9 cl, 1 dwg, 2 ex