FIELD: physics, engineering.
SUBSTANCE: device has substrate, on which fractal topology is formed, with fractal level M no less than three. First fractal level module has 1+N circles with radius R, while center of each of N circles is placed on first circle, forming a central-symmetric shape, and circle with 2R radius, center of which matches center of first circle, and envelopes circles with radius R, and its coupling points with these circles are centers of placement of modules of first fractal level during construction of second level module, which envelope circle with radius 4R, and then topology is built in the same way. fractal topology is formed by slits, width and depth of which is no less than 0.1 mcm.
EFFECT: higher efficiency.
5 cl, 8 dwg
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