FLIP-FLOP DEVICE Russian patent published in 2005 - IPC

Abstract RU 2250554 C1

FIELD: pulse engineering.

SUBSTANCE: proposed flip-flop device has RS flip-flops 1, 2 built around NOR gates 22, 23, 26, 27, and also NOR gates 4, 5, control device 3, diodes 10, 11, resistors 12 - 17, capacitors 6 - 9, memory elements 18, 19 built around rectangular hysteresis loop cores each incorporating write winding and read winding, at least one input bus 20, and common bus 21. Newly introduced in device are RS flip-flop 2, diodes 10, 11, and capacitors 8, 9).

EFFECT: enhanced immunity to persistent intensive noise.

1 cl, 2 dwg

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RU 2 250 554 C1

Authors

Shishkin G.I.

Dikarev I.I.

Dates

2005-04-20Published

2003-09-16Filed