FIELD: pulse engineering.
SUBSTANCE: proposed flip-flop device has RS flip-flops 1, 2 built around NOR gates 22, 23, 26, 27, and also NOR gates 4, 5, control device 3, diodes 10, 11, resistors 12 - 17, capacitors 6 - 9, memory elements 18, 19 built around rectangular hysteresis loop cores each incorporating write winding and read winding, at least one input bus 20, and common bus 21. Newly introduced in device are RS flip-flop 2, diodes 10, 11, and capacitors 8, 9).
EFFECT: enhanced immunity to persistent intensive noise.
1 cl, 2 dwg
Title | Year | Author | Number |
---|---|---|---|
FLIP-FLOP DEVICE | 2003 |
|
RU2250555C1 |
TRIGGER DEVICE | 2003 |
|
RU2237967C1 |
FLIP-FLOP DEVICE | 2003 |
|
RU2248663C1 |
FLIP-FLOP DEVICE | 2002 |
|
RU2248662C2 |
FLIP-FLOP DEVICE | 2003 |
|
RU2250557C1 |
FLIP-FLOP DEVICE (DESIGN VERSIONS) | 1983 |
|
SU1145890A1 |
FLIP-FLOP FACILITY | 2001 |
|
RU2207716C2 |
FLIP-FLOP DEVICE | 2003 |
|
RU2248664C1 |
FLIP-FLOP DEVICE | 2003 |
|
RU2250556C1 |
FLIP-FLOP DEVICE | 1995 |
|
RU2106742C1 |
Authors
Dates
2005-04-20—Published
2003-09-16—Filed