FIELD: pulse engineering.
SUBSTANCE: proposed flip-flop device has RS flip-flop 1, EXCLUSIVE OR gates 2, 3, NOR gates 4, 5, diodes 14, 15, resistors 6, 7, 8, 9, memory elements 12, 13 built around rectangular hysteresis loop magnetic cores carrying single center-tapped winding and connected through resistors 8, 9 to outputs of gates 2,3, as well as input bus 16 and common bus 17. Integration of write and read windings of memory elements 12 and 13 makes it possible to increase turn number of write and read windings by 1.5 times in each of their half-windings. In this way magnetizing current of cores of memory elements 12 and 13 increases by 1.5 times due to increasing rating of limiting resistors 8 and 9.
EFFECT: reduced input current from power supply.
1 cl, 1 dwg
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