FIELD: pulse engineering.
SUBSTANCE: proposed flip-flop device has RS flip-flop 1, EXCLUSIVE OR gates 2,3, NOR gates 4, 5, inverters 6, 7, 8, diodes 15, 16, resistors 9 through 12, capacitors 13, 14, memory items 17, 18 built around magnetic cores with rectangular hysteresis loop and single coil, input bus 19, and common bus 20. Combining write and read coils of memory items 17 and 18 makes it possible to increase coil number of write and read coils by 1.5 times, in each of half-coils of memory items 17 and 18, which reduces magnetizing current through cores of memory items 17 and 18 by approximately 1.5 times due to enhancing ratings of limiting resistors 11 and 12.
EFFECT: reduced input current from power supply.
1 cl, 1 dwg
Title | Year | Author | Number |
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FLIP-FLOP DEVICE | 2002 |
|
RU2248662C2 |
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RU2250555C1 |
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RU2237967C1 |
FLIP-FLOP DEVICE (DESIGN VERSIONS) | 1983 |
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SU1145890A1 |
NONVOLATILE MEMORY LOCATION | 1999 |
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RU2250556C1 |
FLIP-FLOP DEVICE | 1980 |
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SU852131A1 |
FLIP-FLOP DEVICE | 1995 |
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RU2106742C1 |
Authors
Dates
2005-03-20—Published
2003-06-24—Filed