METHOD OF CUTTING SILICON INGOT INTO PLATES Russian patent published in 2011 - IPC B28D5/04 

FIELD: process engineering.

SUBSTANCE: invention relates to processing poly- and monocrystalline semiconductor ingots for cutting them into plates to be used in production of solar batteries, semiconductor devices and printed circuit boards. In cutting semiconductor ingot by lines of wire wetted by abrasive suspension, wire cutting is oriented in cutting zone so that wire is fed into cutting zone by its undeformed surface to used reversing mode. This allows reuse of one wire reel for two cutting processes. Note here that wire breakage probability of reduced as well as cutting duration by more than 3 hours.

EFFECT: reduced wire consumption and higher efficiency.

1 ex, 2 dwg