FIELD: methods of treatment of grown ingots of silicon single crystals; applicable in manufacture of single-crystal silicon wafers of photovoltaic module solar cells. SUBSTANCE: method includes determination of ingot crystallographic lanes by morphological characteristics of initial ingot and then, pseudosquaring of ingot with its subsequent calibration. EFFECT: improvement of ingot quality and reduction of its rejects and silicon irreversible losses. 1 dwg, 2 tbl
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