ELECTRIC-ARC METHOD FOR CUTTING SEMICONDUCTOR WAFERS Russian patent published in 2006 - IPC H01L21/34 B28D5/00 C30B33/00 B23H7/02 

FIELD: cutting brittle nonmetal materials such as low-conductivity semiconductor wafers.

SUBSTANCE: proposed method for cutting semiconductor wafers of (Bi_xSb_{1 - x})₂(Te_ySe_{1 - y})₃ type involves application of two electric pulses across gap between electrode and wafers in liquid insulating medium. Leading edges of electric pulses are in time coincidence. First-pulse voltage amounts to at least gap breakdown threshold value. Second-pulse voltage is minimum half the breakdown threshold value. Pulse length ratio is 1 : 2 : 4, respectively, and current values are 0.5 - 2 A and 2 - 10 A, respectively. Wafer cutting is effected in rectangular coordinate system by means of wire electrode at high cutting speed and plane-parallel position of wafers.

EFFECT: reduced power requirement and enhanced precision of cutting.

5 cl, 1 ex