METHOD OF MAKING CMOS PHOTODIODE STRUCTURE, WHICH WEIGHS OUTPUT SIGNAL Russian patent published in 2009 - IPC H01L27/14 

Abstract RU 2361322 C1

FIELD: physics.

SUBSTANCE: invention relates to semiconductor integrated circuits and can be used in making analogue and digital photodetectors. Invented is a method of making a CMOS structure of a photodiode, which weighs an output signal. The photodiode is made in form of a set of separate diffusion regions-segments on a substrate with opposite type of conductivity. All segments in pairs form MOS-transistor structures. Capacitances of all segments of the photodiode matches up in strictly defined proportions or are equal to each other. By applying trigger and cutoff voltage across different gates of the given MOS-transistors of the structure, segments of the photodiode are electrically connected into a group. Capacitance of the group is equal to the sum of capacitances of segments in it.

EFFECT: invention allows for making several spatial filters using a single electrical circuit.

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RU 2 361 322 C1

Authors

Kushnir Andrej Aleksandrovich

Pugachev Andrej Alekseevich

Stempkovskij Aleksandr Leonidovich

Dates

2009-07-10Published

2007-11-29Filed