FIELD: physics.
SUBSTANCE: invention relates to semiconductor integrated circuits and can be used in making analogue and digital photodetectors. Invented is a method of making a CMOS structure of a photodiode, which weighs an output signal. The photodiode is made in form of a set of separate diffusion regions-segments on a substrate with opposite type of conductivity. All segments in pairs form MOS-transistor structures. Capacitances of all segments of the photodiode matches up in strictly defined proportions or are equal to each other. By applying trigger and cutoff voltage across different gates of the given MOS-transistors of the structure, segments of the photodiode are electrically connected into a group. Capacitance of the group is equal to the sum of capacitances of segments in it.
EFFECT: invention allows for making several spatial filters using a single electrical circuit.
Title | Year | Author | Number |
---|---|---|---|
CMOS PHOTODETECTOR ELEMENT WITH HIGH FILL FACTOR | 2008 |
|
RU2377692C1 |
IMAGE SIGNAL FORMER AND CAMERA SYSTEM | 2010 |
|
RU2537697C2 |
FUNCTIONALLY INTEGRATED PHOTOSENSITIVE MATRIX CELL | 2012 |
|
RU2517917C2 |
PIXEL CIRCUIT, SOLID-STATE IMAGING DEVICE AND CAMERA SYSTEM | 2009 |
|
RU2494565C2 |
CHARGE OR PARTICLE DETECTION | 2003 |
|
RU2339973C2 |
SYSTEMS, METHODS AND APPARATUS FOR CREATING AND USING GLASSES WITH ADAPTIVE LENS BASED ON DETERMINATION OF VIEWING DISTANCE AND EYE TRACKING IN LOW-POWER CONSUMPTION CONDITIONS | 2011 |
|
RU2576344C2 |
SIGNAL-PROCESSING PHOTODETECTOR CMOS CELL | 2003 |
|
RU2252466C1 |
CMOS PHOTODETECTOR CELL | 2003 |
|
RU2262775C2 |
MATRIX THERMAL IMAGING UNIT | 1998 |
|
RU2152138C1 |
SEMICONDUCTOR DEVICE, IMAGE GENERATION, DEVICE OF IMAGE GENERATION AND METHOD TO CONTROL SEMICONDUCTOR DEVICE OF IMAGE GENERATION | 2009 |
|
RU2479145C2 |
Authors
Dates
2009-07-10—Published
2007-11-29—Filed