TRANSISTOR GENERATOR FOR RESONANCE-TUNED LOADS Russian patent published in 2005 - IPC

FIELD: converter engineering; various processes using ultrasonic waves.

SUBSTANCE: proposed transistor generator has half-bridge inverter built around IGBT transistors controlled by half-bridge driver using standard circuit arrangement and provided with internal generator, external time-setting RC circuit, and output transformer; it also has optocoupler transistor, three additional resistors, capacitor, and current transformer.

EFFECT: enhanced effectiveness of transistor generator operating into resonance-tuned load.

1 cl, 2 dwg