TRANSISTOR GENERATOR FOR RESONANT LOADS Russian patent published in 2017 - IPC H03B5/12 

FIELD: electricity.

SUBSTANCE: generator contains half-bridge inverter on IGBT transistors controlled by a semi-bridge driver with an output transformer included by a typical circuit, a high-frequency choke with a condenser, an output transformer, optronic command device and the current transformer with two primary windings, data output of which is connected to the condenser, one primary winding is included in the winding circuit of the output transformer secondary in series with the high-frequency choke and resonant load, the second primary winding is included in series with the condenser parallel to the load.

EFFECT: improved reliability of the transistor generator running on full spectrum technological load.

1 dwg