TRANSISTOR GENERATOR FOR RESONANT LOADS Russian patent published in 2014 - IPC H03B5/00 

FIELD: electricity.

SUBSTANCE: transistor generator for resonant loads contains half-bridge inverter based on IGBT transistors controlled as per standard scheme by driver of the half-bridge inverter with internal generator and external time-setting RC-circuit; generator contains output transformer, optron command device and current transformer, which data output is connected to capacitor, through which RC-circuit is connected in parallel to capacitor of external time-setting RC-circuit of the driver; current transformer is equipped with two primary windings, at that the main winding is connected to the first circuit of output transformer secondary winding in-series with resonant load, while auxiliary winding through auxiliary capacitor and RF choke is connected to the second circuit of output transformer secondary winding.

EFFECT: improving operational reliability to alternating high-Q load of piezoceramic radiator type at high values of equivalent process duty.

1 dwg