TRANSISTOR GENERATOR FOR RESONANT LOADS Russian patent published in 2012 - IPC H03B5/12 H02M7/537 

FIELD: electricity.

SUBSTANCE: transistor generator for resonant loads comprises a semi-bridge inverter on IGBT transistors controlled with a semi-bridge driver connected in accordance with a typical circuit with an internal generator and an external time-setting RC-circuit, an output transformer, an optron transistor and a current transformer, the information output of which is connected to a capacitor, which through an RC-circuit is connected in parallel to a capacitor of an external time-setting RC-circuit of a driver, the current transformer is equipped with two primary windings. The main one is connected into the first circuit of the secondary winding of the output transformer serially with a resonant load, and the additional one - via the additional capacitor and a high-frequency throttle, into the second circuit of the secondary winding of the output transformer.

EFFECT: higher reliability and acoustic efficiency of transistor generator operation at a wide-range process load.

1 dwg