INFRARED DETECTOR Russian patent published in 2005 - IPC

FIELD: cooled semiconductor infrared detectors.

SUBSTANCE: proposed infrared detector has main cryostat accommodating cooled holder mounted chip that carries photosensitive components, and additional cryostat, both provided with microcoolers and hermetically joined together by means of pipeline which is provided with valve and is filled with gas whose condensation temperature is higher than operating temperature of device; capacity of additional cryostat microcooler is higher than that of main cryostat microcooler. As an alternative, sorbent, such as activated carbon, may be disposed on cooled surface inside additional cryostat. As another alternative, throttle-type microcoolers may be used and connected to one cooling agent source.

EFFECT: enhanced operating reliability of device upon long shelf life.

3 cl, 1 dwg