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2 262 777

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IPC

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Application

2004116142/28, 2004-05-27

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Start date

2004-05-27

(22)

Actual filing date

2004-05-27

(45)

Published

2005-10-20

(72)

Inventor

Karlova G.F.Porokhovnichenko L.P.Umbras L.P.

(73)

Holder

Otkrytoe Aktsionernoe Obshchestvo Nauchno-Issledovatel'Skij Institut Poluprovodnikovykh Priborov Niipp)

MAGNETIC FIELD SENSOR Russian patent published in 2005 - IPC

Abstract RU 2262777 C1

FIELD: semiconductor magnetic field sensors.

SUBSTANCE: proposed Hall-effect magnetic field sensor has arsenide-gallium chip incorporating semi-insulating substrate, magnetically sensitive epitaxial n layer, current and potential contacts; thickness of magnetically sensitive later (d) is specified in the range of d = (0.2 - 1.5) μv and mean concentration of electrons (n) in mentioned layer is chosen from following expression: n·d=(3,3-20)·10¹¹ cm².

EFFECT: enhanced specific magnetic sensitivity without noticeable increase in residual voltage and noise level or reducing operating stability.

2 cl, 1 dwg

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RU 2 262 777 C1

Authors

Karlova G.F.

Porokhovnichenko L.P.

Umbras L.P.

Dates

2005-10-20—Published

2004-05-27—Filed