FIELD: low-dielectric-constant hydrated silicon-oxycarbide film obtained by plasmachemical deposition from vapor phase.
SUBSTANCE: proposed process for producing hydrated silicon-oxycarbide (SiCO:H) film includes chemical deposition from vapor phase using alkyl silane incorporating at least one vinyl or ethynyl group together with plasma of O2-containing gas. Alkyl silane can be chosen from group incorporating vinyl trimethylsilane, vinyl triethylsilane, allyl dimethylsilane, ethynyl trimethylsilane, ethynyl triethylsilane, and their mixtures. O2-containing gas can be chosen from group of O2, N2O, O3, H2O2, CO2, H2O, and their mixtures. This process may include in addition stage of deposited film annealing at temperature ranging between 300 and 500 °C for 0.5 - 8 h.
EFFECT: reduced dielectric constant of film obtained by chemical deposition from vapor phase.
5 cl, 17 dwg
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