PROCESS OF MANUFACTURE OF MODIFIED LAYERS OF SILICON DIOXIDE (VARIANTS) Russian patent published in 1997 - IPC

FIELD: semiconductor technology manufacture of solid gas sensors of sulfur dioxide. SUBSTANCE: modified layers of silicon dioxide are produced under isothermal conditions in presence of vapors of organic compounds carrying amino groups. Layers can be formed and modified simultaneously at temperature 120-200 C under total pressure 0.5-1.0 mm Hg from gas jet containing monosilane and oxygen with ratio of concentrations from 1.0 to 0.4 under partial pressure 0.3-0.7 mm Hg of monosilane. Another variant of manufacture of modified layers of silicon dioxide consists in that layers are formed from gas phase carrying monosilane and oxygen with ratio of concentrations from 0.6 to 0.4 under partial pressure 0.5-0.7 mm Hg of monosilane at temperature 70-120 C and total pressure 0.8-1.0 mm Hg and modification is carried out by annealing at 150-200 C in presence of vapors of organic compounds. EFFECT: enhanced efficiency of process. 5 cl, 2 dwg