FIELD: electronic engineering, in particular, light-emitting diode devices, applicable i manufacture of light-emitting devices used in municipal engineering, advertisement, automobile industry, power engineering, railway transport and in other branches of industry.
SUBSTANCE: the light-emitting diode device has one or more semiconductor crystals used as radiators. The holder is made of silicon with connecting terminals. A recess with a flat bottom for fitting of crystals and reflecting the radiation by the side surface is made in the holder by etching. The side surface of the recess reflecting the radiation is made in the form of a tetrahedron or surface of a body of resolution or in the form of some other radiation concentrator so that the side radiation of the crystals would be directed towards the optical element forming the radiation of the necessary indicatrix. The device has also the first electrode, on which the semiconductor crystal is installed, the second electrode on the upper plane of the silicon holder, on which the second electrode of the semiconductor crystal is boiled soft, and two contacts for surface wiring on the lower surface of the holder.
EFFECT: enhanced power (of luminous intensity) of the light-emitting diode device due to the use of silicon as a base at manufacture of the device casing for surface wiring, reduced thermal resistance of the casing due to it, and improved reflecting capacity of the hole at etching of it in the silicon base.
12 cl, 3 dwg
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Authors
Dates
2005-12-27—Published
2003-06-23—Filed