SEMICONDUCTOR DEVICE Russian patent published in 2010 - IPC H01L33/52 

FIELD: physics, semiconductors.

SUBSTANCE: invention relates to optoelectronics. The semiconductor device has a sealed casing, a base with connection leads and at least one of the leads is insulated from the base. There is depression in the base which has a flat bottom for fitting one or more semiconductor elements with leads. The base has two layers. The bottom layer is made from diamond and the top from silicon. The depth of the depression is equal to the thickness of the silicon layer.

EFFECT: invention reduces thermal resistance of the device as a whole and, as a result, increases power consumption without loss of proportionality of improvement of useful parametres of the device.

20 cl, 6 dwg, 2 tbl