METHOD OF FORMING HIGH-QUALITY MOS STRUCTURES WITH POLYSILICON GATE Russian patent published in 2014 - IPC C30B33/02 C30B33/04 H01L21/263 

FIELD: physics.

SUBSTANCE: invention relates to microelectronics and can be used to produce high-quality, high-power double-diffused MOS transistor, CMOS integrated circuits and CCD devices. The method includes thermal annealing of MOS structures in the temperature range of 600-850°C in an electric field with field intensity of 10-100 V/cm, while simultaneously irradiating with light in the visible and near-infrared spectrum in the wavelength range λ=0.5-1.4 mcm with radiation intensity of 1-10 W/cm² and with a polysilicon gate with thickness of not more 0.6 mcm on an oxide located on a silicon substrate.

EFFECT: said processing enables to obtain high-quality MOS structures with minimum surface-state density N_ss of less than 10¹⁰ cm^-2, minimum spread of threshold values ∆V_t of less than 0,05 V and maximum critical field value E_cr greater than 2·10⁷ V/cm.

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