SEMICONDUCTOR LIGHT SOURCE Russian patent published in 2003 - IPC

FIELD: solid state electronics; high-power light sources built around semiconductor light-emitting chips. SUBSTANCE: semiconductor light source has substrate of silicon wafer wherein at least one depression is made to receive electroluminescent semiconductor chip with ohmic contacts. Metal- sprayed current-conducting sections are formed on substrate surface and also on side surface and bottom of depression; metal-sprayed conducting section made on bottom forms contact pad which is connected to one of ohmic contacts of semiconductor chip. Novelty is that one more metal sprayed section insulated from first one is formed on depression bottom and connected to other ohmic contact of semiconductor chip. Metal-sprayed current-conducting sections on side surface of depression are made in the form of buses, each being connected to one of contact pads on bottom of depression and to metal-sprayed conducting section on substrate surface; mentioned metal-sprayed conducting sections on substrate surface are insulated from each other. EFFECT: enhanced optical power and operating reliability. 3 cl, 2 dwg