METHOD FOR MANUFACTURING MICRO- AND NANODEVICES ON LOCAL SUBSTRATES Russian patent published in 2006 - IPC H01L21/82 

FIELD: engineering of semiconductor equipment, technology for use during manufacturing of integral circuits, semiconductor devices or devices on solid body and their parts.

SUBSTANCE: method for manufacturing micro- and nanodevices includes forming additional multi-layer structure, having, at least, substrate, sacrificial layer and layers for manufacturing technical structures, sacrificial layer is removed and film composed of active layers, free from connection to substrate, is transferred onto new substrate, which has different properties than source substrate, while new substrate is made locally, on the same substrate with active layers and technical structures, multi-layer structure is formed to have at least one layer with internal resilient stress, after removal of sacrificial layer in given area, film of active layers is freed from connection to substrate, and under effect from internal resilient stress shape of aforementioned film is altered and than film is transferred onto new local substrate.

EFFECT: possible manufacturing of semiconductor devices, where on same circuit combination of technical structures, positioned on different substrates, is possible, in other words, possible combination on one substrate chip of technical structures, special features of which require positioning on substrates with different properties; possible spatial combination of micro- and nanodevices, which are hard or impossible to manufacture in already combined state; higher precision is possible in comparison to combination of two different substrates, because combination occurs within limits of one plate with use of self-organization processes.

1 cl, 6 dwg