PROTECTIVE MASK MANUFACTURING PROCESS FOR NANOLITHOGRAPHY Russian patent published in 1998 - IPC

FIELD: microelectronics and nanoelectronics; solid-state devices with characteristic nanometric dimensions of components. SUBSTANCE: when producing protective mask for nanolithography, auxiliary layer is formed under monocrystalline protective layer which is selectively etched under local areas of protective layer meant for producing cuts; voltage concentrators are produced in local areas of layer proper and mechanical stresses are set up to initiate controlled formation of cracks. Protective and auxiliary layers are formed in single procedure while growing solid-state structure. EFFECT: improved characteristics of solid-state devices obtained. 2 cl, 4 dwg