METHOD FOR PRODUCING QUANTUM STRUCTURES: QUANTUM WIRES, QUANTUM DOTS, COMPONENTS OF QUANTUM DEVICES Russian patent published in 2006 - IPC B82B3/00 

FIELD: microelectronics, nanoelectronics, and semiconductor engineering; producing quantum device components and quantum-effect structures.

SUBSTANCE: proposed method for producing quantum dots, wires, and components of quantum devices includes growing of stressed film from material whose crystalline lattice constant is higher than that of substrate material. Thickness of stressed film being grown is smaller than critical value and film is growing as pseudomorphous one. Sacrificial layer is grown between stressed film and substrate which is then selectively removed under predetermined region of film thereby uncoupling part of the latter from substrate; this part is bulged or corrugated with the result that film stress varies causing shear of conduction region bottom (top of valence region) and formation of local potential well for carriers. In addition, stressed film may be composed of several layers of different materials; it may also have layer mainly holding charge carriers and layer practically free from charge carriers.

EFFECT: facilitated manufacture of quantum structures, enlarged range of materials used, and improved characteristics of components produced.

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