METHOD OF PRODUCING GRAPHENE NANO-RIBON FET Russian patent published in 2010 - IPC H01J1/02 H01J1/62 H01J9/00 

Abstract RU 2400858 C1

FIELD: electrical engineering.

SUBSTANCE: film flat components comprising form-building and functional graphene layers are first fabricated. Note here that said flat film elements are formed on substrate with required spatial arrangement over substrate area, primarily, regular arrangement. Then said flat film elements are separated from substrate and transformed into emitters with preset 3D spatial configuration. Transformation is performed by mechanical internal strains introduced into form-building layers either in producing film flat elements or in transformation, or in their separation and transformation in emitters.

EFFECT: uniform emission of electrons over emitters range, required electron emission density, its controllability, scalability of emitter sizes, optimised emitter outline shape and controlled emission current of every emitter.

16 cl, 9 dwg, 7 ex

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RU 2 400 858 C1

Authors

Prints Viktor Jakovlevich

Mutilin Sergej Vladimirovich

Golod Sergej Vladislavovich

Dates

2010-09-27Published

2009-11-09Filed