FIELD: microelectronics.
SUBSTANCE: proposed cell can be used for manufacturing multiple-component integrated-circuit photodetectors, such as video cameras and digital photography. First p-n junction is partially disposed in first separate area of substrate and partially in second one, both insulated with dielectric material. Second p-n junction is disposed in surface part of second insulated area and is formed by inverting layer induced when polycrystalline layer applied on top of silicon dioxide layer is placed at positive potential.
EFFECT: reduced color-separation noise level.
1 cl, 1 dwg
Title | Year | Author | Number |
---|---|---|---|
COLOR-DIVISION PHOTOCELL | 2003 |
|
RU2309483C2 |
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RU2309485C2 |
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Authors
Dates
2006-04-10—Published
2003-07-09—Filed