PHOTODECTOR Russian patent published in 2012 - IPC H01L27/146 

FIELD: physics.

SUBSTANCE: photodetector has five vertically-integrated layers with opposite conductivity type, each connected to three MOS transistors arranged such that, in the photodetector, the photosensitive surface layer with n⁺ conductivity type lies 0.2 mcm from the surface of the substrate and is in direct contact with the middle layer with p conductivity type, which lies inside the substrate at a depth of 0.2-0.7 mcm, which is in direct contact with the middle layer with n conductivity type, lying at a distance of 0.7-1.2 mcm, and is in direct contact with a deep layer with p conductivity type, lying at a distance of 1.2-1.7 mcm, in direct contact with a deep layer with n conductivity type, lying at a distance of 1.7-2.5 mcm, which is in direct contact with a semiconductor substrate with p conductivity type.

EFFECT: high selectivity of decomposing white light into spectral wavelength ranges for detecting blue, green and red spectral ranges of visible radiation and broader functionalities owing to selective detection of five spectral ranges of visible radiation.

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