FIELD: microelectronics; multicomponent integrated photodetectors, such as video cameras, and digital photography.
SUBSTANCE: proposed color-division photodetector cell has first p-n junction disposed in first individual substrate region separated by insulator, second p-n junction disposed in surface part of second insulated region and formed by inversion layer initiated when polycrystalline silicon layer disposed on silicon dioxide layer above the latter is placed at positive potential. Disposed under first p-n junction is first additional region of same polarity of conductivity as that of substrate to form potential barrier for charge carriers, first additional region of polarity of conductivity reverse to that of substrate being disposed under first additional region of reverse polarity of conductivity; abutting against the latter is second insulated region of polarity of conductivity reverse to that of substrate provided with ohmic contact. Second additional region of polarity of conductivity same to that of substrate disposed under mentioned regions forms potential barrier for charge carriers generated in substrate.
EFFECT: reduced color-division noise level of integrated photodetectors; provision for compatibility between photocells and reading complementary metal-oxide-semiconductor and other control circuits of photodetectors.
1 cl, 1 dwg
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COLOR-DIVISION PHOTOCELL | 2003 |
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Authors
Dates
2007-10-27—Published
2003-07-30—Filed