PHOTODETECTOR CELL Russian patent published in 2006 - IPC H01L31/06 

FIELD: microelectronics; production of integrated multicomponent photodetectors.

SUBSTANCE: proposed photodetector cell characterized in process compatibility with standard CMOS technology has at least one p-n junction in substrate of first polarity of conductivity buried at certain depth from surface coated with silicon dioxide layer. At least part of surface above p-n junctions is coated with polycrystalline silicon layer whose thickness is great enough to suppress ultraviolet and blue parts of incident rays.

EFFECT: enlarged dynamic range.

4 cl, 2 dwg