METHOD OF MAKING PHOTODETECTOR CELL Russian patent published in 2012 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: method of making a photodetector cell involves processes for forming three vertically integrated layers of alternating n- and p-type conductivity on a p-type semiconductor substrate, wherein ohmic contacts are formed for each of said layers and substrate. A groove is etched in the top semiconductor layer, having depth of at least 0.6 times the depth of the top semiconductor layer, which is then filled with a semiconductor layer of opposite conductivity type with intrinsic dopant concentration which is at least an order less than dopant concentration in the top semiconductor layer, and also, along with the semiconductor layer formed in the groove, a surface semiconductor layer of opposite conductivity type is formed, having thickness at least equal to 0.3 times the thickness of the underlying semiconductor layer of opposite conductivity type in which the groove is formed, wherein dopant concentration in that layer is at least an order higher than intrinsic dopant concentration in the underlying semiconductor layer.

EFFECT: making photodetectors having higher selectivity of decomposition of white light into spectral wavelength ranges and broader functional capabilities.

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