FIELD: microelectronics; multicomponent integrated photodetectors such as single-chip digital video cameras; digital photography.
SUBSTANCE: proposed color-division photodetector cell has first p-n junction partially disposed in separate first, second, and third regions of silicon substrate. These regions are isolated by insulator; second p-n junction is disposed in surface part of second and third insulated regions and is formed by inversion layer initiated when polycrystalline silicon layers disposed on silicon dioxide layer above second and third regions are placed at positive potential. Disposed in substrate under first and second regions and deepened in effective surface below first p-n junction is additional region of same polarity of conductivity as substrate that forms potential barrier for minority charge carriers generated in substrate region disposed deeper than barrier.
EFFECT: reduced noise level, ability of attaining compatibility between photocells and complementary metal-oxide-semiconductor reading components and other control circuits of photodetectors.
3 cl, 1 dwg
Title | Year | Author | Number |
---|---|---|---|
SINGLE-SECTION COLOR-DIVISION PHOTOCELL | 2003 |
|
RU2309485C2 |
COLOR-SEPARATION PHOTODETECTOR CELL | 2003 |
|
RU2273916C2 |
PHOTODETECTOR CELL | 2003 |
|
RU2290722C2 |
PHOTO-RECEIVING CELL WITH COLOR DIVISION | 2004 |
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PHOTODETECTOR CELL | 2003 |
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PHOTODETECTOR CELL WITH VERTICAL COLOUR SEPARATION | 2007 |
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METHOD OF MAKING PHOTODETECTOR CELL | 2011 |
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RU2456708C1 |
PHOTODECTOR | 2010 |
|
RU2439747C1 |
PHOTODETECTING DEVICE WITH PHOTODETECTORS WITH VERTICAL COLOUR SEPARATION | 2007 |
|
RU2362235C1 |
PHOTO-RECEIVING CELL WITH VERTICAL COLOUR SEPARATION | 2007 |
|
RU2363969C1 |
Authors
Dates
2007-10-27—Published
2003-07-09—Filed