METHOD OF MANUFACTURING THE EPITAXIAL LAYER OF SILICON ON A DIELECTRIC SUBSTRATE Russian patent published in 2017 - IPC C30B25/02 C30B29/06 C30B25/10 C30B25/16 C30B25/18 C23C16/24 C23C16/52 H01L21/02 H01L21/205 H01L21/786 H01L21/86 H01L27/12 

FIELD: chemistry.

SUBSTANCE: method for producing epitaxial layers of monocrystalline silicon of n- and p-type conductivity in a material of dielectric substrates with lattice parameters similar to parameters silicon by chemical vapour phase epitaxy. The substrate material may be used, in particular, leucosapphire (corundum), spinel, diamond, quartz. The method consists in the location of the substrate in the reactor, heating the working surface of the substrate to 900-1000°C, the reaction gas feed stream comprising an inert carrier gas and monosilane silicon capacity to form an initial continuous layer on the working surface of the substrate, adding to the flow of the reaction gas a halogen-containing reactant stream and forming an epitaxial silicon layer of desired thickness. Starting solid silicon layer is increased at a rate of 3000 E/min to 6000 E/min. After forming the layer on the working surface of the substrate of the reaction gas flow rate is reduced, reducing the growth rate at 500-2000 E/min. To the flow of the reaction, the gas stream of saturated vapour of silicon halide or halosilane gas is added, whose flow rate is set so that the growth rate of the silicon layer returned to the values of 3000-6000 E/min.

EFFECT: obtaining high quality silicon layer and reducing the cost of the manufacturing process.

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