SILICON EPITAXIAL STRUCTURE PRODUCING METHOD Russian patent published in 2017 - IPC H01L21/20 

FIELD: electrical engineering.

SUBSTANCE: invention relates to semiconductor structures production field and can be used for production of silicon single- or multilayer structures, used in modern microelectronics power devices technology. Summary of invention consists in fact, that during epitaxial structure forming auto doping effect limitation occurs due to successive forming of protective layer part on substrate non-working surface until reaching required thickness half value, epitaxial layer deposition on substrate working surface with thickness of 3–4 mqm, protective layer formation on substrate non-working surface to required thickness and epitaxial layer deposition on substrate working surface to required thickness.

EFFECT: using given method enables to increase silicon epitaxial layers parameters homogeneity and, therefore, to increase silicon epitaxial structures production yield.

1 cl, 1 dwg