HETEROEPITAXIAL STRUCTURE WITH A DIAMOND HEAT SINK FOR SEMICONDUCTOR DEVICES AND METHOD FOR ITS MANUFACTURE Russian patent published in 2023 - IPC H01L21/205 

FIELD: semiconductor technology.

SUBSTANCE: heteroepitaxial structure with a diamond heat sink for semiconductor devices and a method for its manufacture can be used in the manufacture of microwave devices and power electronics devices as active structures. A method for obtaining a heteroepitaxial structure with a diamond heat sink for the manufacture of semiconductor devices is based on growing polycrystalline diamond on a base multilayer substrate and an epitaxial structure of a semiconductor device based on wide-gap III-nitrides, in which, after growing polycrystalline diamond, part of the layers of the base substrate is removed to the base layer, while the multilayer substrate of the SOI structure is used as the base substrate, on one surface of the single-crystal silicon layer with the (111) surface orientation a layer of polycrystalline diamond is grown, another layer of single-crystal silicon and a layer of silicon dioxide of the SOI structure are removed after applying a layer of polycrystalline diamond, and the epitaxial structure of a semiconductor device based on wide-gap III-nitrides is formed on the other surface of the single-crystal silicon layer with (111) surface orientation. The heteroepitaxial structure contains a base substrate made on the basis of a SOI structure, on one surface of the single-crystal silicon layer with the (111) surface orientation, of which a polycrystalline diamond layer is deposited, and on the other surface of the single-crystal silicon layer with the (111) surface orientation of the SOI structure with previously removed dielectric layers and another single-crystal silicon layer, an epitaxial structure of a semiconductor device based on wide-gap III-nitrides is made.

EFFECT: effective performance.

14 cl, 3 dwg