METHOD OF PRODUCING EPITAXIAL SILICON STRUCTURE Russian patent published in 2024 - IPC H01L21/203 

FIELD: semiconductor devices.

SUBSTANCE: invention relates to production of semiconductor devices. Method of silicon epitaxial structure manufacturing includes formation of protective layer of polycrystalline silicon on reverse side of semiconductor substrate from low-resistance silicon by means of thermal vacuum deposition during evaporation of polycrystalline silicon from a substrate holder with inductive heating, at temperature of 1,230–1,250°C, pressure (1.33–2.66)×10³ Pa, during 600–900 s, formation of an epitaxial layer on the front side of the semiconductor substrate by means of epitaxial growth from the gas phase, in two stages – the first, second, respectively, with different process modes at each stage, formation of protective and epitaxial layers is carried out in a single technological process, wherein the epitaxial layer formation on the front side of the semiconductor substrate by epitaxial growth from the gas phase at the first stage is carried out at temperature of 950–1,150°C, pressure (1.33–2.66)×10³ Pa, for 10–20 s, simultaneously with the epitaxial layer formation on the front side of the semiconductor substrate by means of epitaxial growth from the gas phase at the first and second stages, the epitaxial layer is doped with an n-type impurity, with the same concentration of dopant at the first and second stages, equal to (6–15)×10¹⁵ cm^-3.

EFFECT: invention provides an increase in the degree of doping, high homogeneity of the degree of doping, reduced thickness of the transition region of the substrate – epitaxial layer, broader functional capabilities and, accordingly, improved electrophysical parameters of microwave devices using said epitaxial silicon structures.

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