METHOD FOR PRODUCING HETEROEPITAXIAL SILICON LAYER ON DIELECTRIC Russian patent published in 2018 - IPC C30B25/02 C30B33/02 C30B29/06 C30B25/18 C01B33/29 H01L21/205 

FIELD: electricity.

SUBSTANCE: method for producing heteroepitaxial silicon layer comprises formation of growth silicon islands on the surface of the dielectric substrate (sapphire, spinel, diamond, quartz) with subsequent build-up of initial silicon layer by thermal decomposition of monosilane, its heat treatment over a period of time sufficient for removing structural defects arising as a result of stress relaxation of silicon crystal lattice, and continuation of build-up of silicon layer to required thickness values. The build-up of initial silicon layer is carried out at a temperature of 930-945°C until merge of growth silicon islands and formation of a continuous layer, heat treatment temperature is set within 945-975°C, and the temperature of layer growth of the required thickness is set not less than 960°C.

EFFECT: increased structural quality and homogeneity of the resistivity distribution over the thickness of the heteroepitaxial silicon layer on the dielectric.

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