CURRENT POWER SUPPLY Russian patent published in 2017 - IPC G05F3/26 

FIELD: electricity.

SUBSTANCE: method is implemented by inserting the fourth and the fifth MIS-transistors (5 and 6) metal-insulator-semiconductor (MIS) with the induced channel of the first conductivity type, the third and fourth MIS-transistors (9 and 10) with the induced channel of the second conductivity type and these elements coupling. This allows to align the MIS-transistors electric modes that form currents proceeding in diodes (11 and 12). The resistor (1), from first to third MIS-transistors (2-4) with the induced channel of the first conductivity type, the first and the second MIS-transistors (7 and 8) with the induced channel of the second conductivity type are also marked on the structure diagram. The formula expresses the device output current, where k=1,38⋅10^-23 joule/deg is the Boltzmann constant, q=1,6⋅10^-19 Cl is the electron charge, β₂-β₄ - the MIS transistors 2-4 steepness, the ratio of which is determined by the ratio of the transistor channels sizes, S_D11 and S_D12 - are diodes 11 and 12 junction areas, R1₀ - resistor resistance 1 when T=T₀ in the linearly proportional absolute temperature scale of the approximation of the resistance termodependence - R1=R1₀⋅T/T₀.

EFFECT: increase in stability of the generated current on the supply voltage.

8 dwg, 2 tbl