SYMMETRICAL HIGH-VALUE SEMICONDUCTOR PULSED VOLTAGE LIMITER CHARACTERIZED IN ENHANCED AVALANCHE BREAKDOWN ENERGY Russian patent published in 2006 - IPC H01L29/861 

FIELD: high-power semiconductor devices.

SUBSTANCE: proposed symmetrical high-value semiconductor pulsed voltage limiter characterized in low dynamic resistance and enhanced avalanche breakdown energy has m similar balanced low-voltage limiters series-interconnected to form pile, each limiter incorporating base region of given polarity of conductivity, as well as abutting top and bottom emitter regions of reverse polarity of conductivity; each limiter has edge chamfer for protection against surface breakdown. Ohmic contacts are made for top emitter region of low-voltage limiter uppermost in pile and for bottom emitter region of bottom low-voltage limiter. Each low-voltage limiter has additional diffusion regions on periphery of all top and bottom emitter regions, their polarity of conductivity being reverse to that of base region so that avalanche-producing voltage in p-n junction of these regions (U_{BR 7.8}) and maximal voltage across p-n junctions of top and bottom regions under avalanche breakdown conditions (U_{BRSM 2.3}) are interrelated by expression U_{BR 7.8} > U_{BRSM 2.3}; additional diffusion regions are made so that top and bottom emitter regions of all symmetrical low-voltage limiters are of same size and are equal to emitter region uppermost in low-voltage limiter pile, their centers being disposed on same symmetry axis.

EFFECT: enhanced avalanche breakdown energy of symmetrical high-voltage limiters.

1 cl, 4 dwg, 1 tbl