SEMICONDUCTOR POWER DEVICE Russian patent published in 2007 - IPC H01L29/74 

FIELD: semiconductor power devices such as power diodes, dinistors, and transistors, including symmetrical ones.

SUBSTANCE: proposed semiconductor power device built around silicon wafer of n polarity of conductivity with two main surfaces disposed on opposite ends of wafer has marginal bevel on at least main surface side and p diffusion layer forming high-voltage p-n junction with back chamfer, basic n layer adjoining mentioned p diffusion layer on one end and with diffusion layer passing to second main surface on other end that forms flat junction with straight chamfer together with n basic layer, as well as ohmic contacts for main surfaces. Mentioned high-voltage p-n junction has conical peripheral part and flat central part; conical peripheral part is tilted to flat central part through angle β. This angle and length d forming conical peripheral part meet definite conditions and are interrelated by equation providing for selecting their values.

EFFECT: enhanced stability of reverse current and breakdown voltage of high-voltage p-n junction and ability of breakdown voltage regulation.

1 cl, 2 dwg