FIELD: electricity.
SUBSTANCE: high-voltage semiconductor instrument includes silicon diffusion planar p'-N transition, electric contacts for supply of potentials and protective rings arranged in the area of perimeter in p'-layer of planar p'-N transition and arranged in the form of circular grooves etched in diffusion p'-layer. Depth, width of grooves and their total width comply with certain ratios.
EFFECT: simplified design and reduced area occupied by protective rings of specified high-voltage semiconductor instrument.
1 dwg
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